Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs

The total ionizing dose sensitivity of planar 150 nm CMOS technology is evaluated by measuring the DC responses nMOSFETs at several irradiation steps up to 125 krad(SiO2). Different TID sensitivities are measured for transistors built with different channel dimensions and operating voltages (I/O core). experimental results evidence strong relations between doping profiles in channel. I/O have highest due their thicker gate oxide lower bulk compared core devices. In general, narrow-channel devices worst degradation negative threshold voltage shifts, transconductance variations increased subthreshold leakage currents, suggesting charge trapping shallow trench isolation (STI). enhanced tolerance short-channel most likely related induced overlapping halo implantations. Finally, fabricated low-leakage applications exhibit near insensitivity higher used during fabrication minimize drain-to-source current.